Table 1. DC current and magnetotransport of the small Corbino device. The table contains dc current ( I dc ) data measured in a small Corbino device under a constant bias voltage of V dc = 25 mV. The first column gives the perpendicular magnetic field ( B ) in Tesla. The remaining columns provide the measured current ( I dc ) in Amperes. Each current column corresponds to a different temperature ( T ), with the temperature value given in the column header in Kelvin. The sample resistance can be calculated using R = V dc / I dc . Table 2. DC current and magnetotransport of the medium Corbino device. The table contains dc current ( I dc ) data measured in a medium Corbino device under a constant bias voltage of V dc = 15 mV. The first column gives the perpendicular magnetic field ( B ) in Tesla. The remaining columns provide the measured current ( I dc ) in Amperes. Each current column corresponds to a different temperature ( T ), with the temperature value given in the column header in Kelvin. The corresponding sample resistance can be extracted using R = V dc / I dc . Table 3. DC current and magnetotransport of the large Corbino device. The table contains dc current ( I dc ) data measured in a large Corbino device under a constant bias voltage of V dc = 15 mV. The first column gives the perpendicular magnetic field ( B ) in Tesla. The remaining columns provide the measured current ( I dc ) in Amperes. Each current column corresponds to a different temperature ( T ), with the temperature value given in the column header in Kelvin. The corresponding sample resistance can be extracted using R = V dc / I dc . Table 4. DC current and magnetotransport of the Corbino device with R b = 11 μ m . The table contains dc current ( I dc ) data measured in a Corbino device with an outer radius R b = 11 μ m under a constant bias voltage of V dc = 20 mV. The first column gives the perpendicular magnetic field ( B ) in Tesla. The remaining columns provide the measured current ( I dc ) in Amperes. Each current column corresponds to a different temperature ( T ), with the temperature value given in the column header in Kelvin. The corresponding sample resistance can be extracted using R = V dc / I dc . Table 5. DC current and magnetotransport of the Corbino device with R b = 12 μ m . The table contains dc current ( I dc ) data measured in a Corbino device with an outer radius R b = 12 μ m under a constant bias voltage of V dc = 20 mV. The first column gives the perpendicular magnetic field ( B ) in Tesla. The remaining columns provide the measured current ( I dc ) in Amperes. Each current column corresponds to a different temperature ( T ), with the temperature value given in the column header in Kelvin. The corresponding sample resistance can be extracted using R = V dc / I dc . Table 6. DC current and magnetotransport of the Corbino device with R b = 18 μ m . The table contains dc current ( I dc ) data measured in a Corbino device with an outer radius R b = 18 μ m under a constant bias voltage of V dc = 15 mV. The first column gives the perpendicular magnetic field ( B ) in Tesla. The remaining columns provide the measured current ( I dc ) in Amperes. Each current column corresponds to a different temperature ( T ), with the temperature value given in the column header in Kelvin. The corresponding sample resistance can be extracted using R = V dc / I dc .